600V - 6A - IGBT Power Switching

Features  Built in fast recovery diode in one package  Low collector to emitter saturation voltage VCE(sat) =1.8 V typ. (at IC = 20 A, VGE = 15V, Tc = 25 C)  Quality grade: Standard  High speed switching  Applications: PFC

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RENESAS

瑞萨

IGBT 600V 6A TO-3PFM-5 Built-In FRD

IGBT product for Power Factor Correction (PFC).

Renesas

瑞萨

600V - 10A - IGBT and Diode High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching

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RENESAS

瑞萨

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

文件：222.45 Kbytes 页数：12 Pages

TECCOR

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

文件：212.84 Kbytes 页数：12 Pages

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