600V - 10A - IGBT and Diode High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching

文件：115.64 Kbytes 页数：9 Pages

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600V - 10A - IGBT and Diode High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching

文件：115.64 Kbytes 页数：9 Pages

RENESAS

瑞萨

600V - 10A - IGBT and Diode High Speed Power Switching

文件：115.64 Kbytes 页数：9 Pages

RENESAS

瑞萨

IGBT for PFC

Support is limited to customers who have already adopted these products.\n\nIGBT product series for Power Factor Correction (PFC), UPS, solar power generation, and welding applications, recommended for 50 to 100 kHz frequencies, and not guaranteed against short circuit.

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