丝印：R33；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：490.74 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：489.61 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：485.55 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；WE-TDC SMT Shielded Coupled Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：684.13 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；WE-MAIA SMD Power Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125°C under worst case conditions Ambient Temperature (refering to IR) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Temperature (in original packaging) -20 °C up to +40 °C

文件：477.47 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；WE-MAIA SMT Power Inductor

General Properties: Ambient Temperature (referring to IR) -55 up to +110 °C Operating Temperature -55 up to +150 °C Storage Conditions (in original packaging)

文件：856.13 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；WE-MAIA SMT Power Inductor

General Properties: Ambient Temperature (referring to IRP) -55 °C up to +110 °C Operating Temperature -55 °C up to +150 °C Storage Conditions (in original packaging)

文件：734.53 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；WE-XHMA SMT Power Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：849.31 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R33；Package：SOT-23；NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 2.2 kΩ, R2 = 47 kΩ) Application • Switching, Interface, and

文件：248.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：R33；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 88 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two High-Speed I/O Lines Low Clamping Voltage Low Leakage Current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lightning) 4A (8/20μs) Applications Cell Phone Handsets and Acce

文件：2.23052 Mbytes 页数：4 Pages

UNSEMI

优恩半导体