隔离型DC/DC 电源

高转换速率 GaN 晶体管驱动器需要 6 V 隔离式电源，并要具备高隔离电压和低隔离电容。RxxP06S 系列经过专门设计，可满足这一严苛要求，隔离电压 6400 VDC/秒，隔离电容 <10 pF。内部变压器利用壶形铁芯从物理上将输入和输出绕组隔离，但转换器仍可安装到符合工业标准的 SIP7 封装中。RxxP06S 系列提供 5 V、12 V、15 V 或 24 V 输入电压选项，并已通过最新标准 UL/IEC62368 安全认证。 • 6 V 输出，适用于 GaN 驱动器应用\n• 具有独立绕组的壶形铁芯变压器\n• 5.2 kVDC 高隔离，尺寸紧凑\n• 低隔离电容（最高为 10 pF）\n• 通过 UL/IEC/EN62368-1、IEC/EN60950-1 认证;

Recom

1 Watt SIP7 Single Output for GaN Application

文件：572.88 Kbytes 页数：6 Pages

RECOM

Package：7-SIP 模块，4 引线；包装：管件 类别：电源 - 板安装 直流转换器 描述：DC DC CONVERTER 6V 1W

Recom Power

15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：87.45 Kbytes 页数：8 Pages

Intersil

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：308.83 Kbytes 页数：2 Pages

ISC

无锡固电

15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：87.45 Kbytes 页数：8 Pages

Intersil