丝印：R10；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：674.85 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R10；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.18 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R10；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.12 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R10；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.99 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R10；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：487.57 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R10；Package：SMD；This specification applies to large current and low loss SMD shielding power inductor.

文件：2.37045 Mbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：R10；This specification applies to large current and low loss SMD shielding power inductor.

文件：1.80556 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：R1001；Package：SOP8；Automotive Zero Drift Low Offset Voltage Rail-to-Rail input/output CMOS Operational Amplifier

General Description LMR1001YF-C single CMOS operational amplifier features zero drift, low input offset voltage and Rail-to-Rail input/output that are suitable for sensor amplifiers, engine control unit, electric power steering, anti-lock braking system and all automotive application. Feat

文件：1.3998 Mbytes 页数：20 Pages

ROHM

罗姆

丝印：R10022；Package：DFN；2-Line ESD Protection for Automotive Ethernet

Features • Open Alliance Compliant • ESD Per IEC 61000-4-2 ±15kV (Contact), 25kV (Air) • ESD per ISO 10605 ±30kV Contact & Air (R =2kΩ, C = 330pF/150pF) ±15kV Contact (R = 330Ω, C = 150pF) • 1000 Contact Discharges: ±15kV (Open Alliance) • Low Capacitance: 0.44pF Typical • TVS Trigger

文件：978.49 Kbytes 页数：8 Pages

SEMTECH

先之科

丝印：R10022；Package：DFN；2-Line ESD Protection for Automotive Ethernet

Features • Open Alliance Compliant • ESD Per IEC 61000-4-2 ±15kV (Contact), 25kV (Air) • ESD per ISO 10605 ±30kV Contact & Air (R =2kΩ, C = 330pF/150pF) ±15kV Contact (R = 330Ω, C = 150pF) • 1000 Contact Discharges: ±15kV (Open Alliance) • Low Capacitance: 0.44pF Typical • TVS Trigger

文件：978.49 Kbytes 页数：8 Pages

SEMTECH

先之科