1.0 – 6.0 GHz 35 W GaN Power Amplifier

Applications • Electronic Warfare • Radar • Test Instrumentation • Communications Key Features • Frequency Range: 1 – 6 GHz • PSAT : 45.4 dBm (PIN = 23 dBm) • PAE: 41% (PIN = 23 dBm) • Power Gain: 22.4 dB (PIN = 23 dBm) • Small Signal Gain: 30.2 dB • Bias: VD = 24 V, IDQ = 2044 mA

文件：660.98 Kbytes 页数：25 Pages

QORVO

威讯联合

1.0 - 6.0 GHz 35 Watt GaN Power Amplifier

Qorvo's QPM0106 is a packaged, high power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process. The QPM0106 operates from 1.0  - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power with 22.4 dB of large signal gain and 41 % power–added efficiency.The QPM0106 is packag • Frequency Range: 1 - 6 GHz\n• PSAT : 45.4 dBm (PIN = 23 dBm)\n• PAE: 41% (PIN = 23 dBm)\n• Power Gain: 22.4 dB (PIN = 23 dBm)\n• Small Signal Gain: 30.2 dB\n• Bias: VD = 24 V, IDQ = 2044 mA\n• Package Dimensions: 15.24 x 15.24 x 3.51 mm;

Qorvo

威讯联合

1.0 – 6.0 GHz 35 W GaN Power Amplifier

Applications • Electronic Warfare • Radar • Test Instrumentation • Communications Key Features • Frequency Range: 1 – 6 GHz • PSAT : 45.4 dBm (PIN = 23 dBm) • PAE: 41% (PIN = 23 dBm) • Power Gain: 22.4 dB (PIN = 23 dBm) • Small Signal Gain: 30.2 dB • Bias: VD = 24 V, IDQ = 2044 mA

文件：660.98 Kbytes 页数：25 Pages

QORVO

威讯联合

Rectifier Assembly

文件：118.78 Kbytes 页数：2 Pages

SSDI

RECTIFIER

文件：216.2 Kbytes 页数：2 Pages

SSDI

Low VF ??High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

文件：218.52 Kbytes 页数：3 Pages

SANYO

三洋