1.0 – 6.0 GHz 35 W GaN Power Amplifier

Applications • Electronic Warfare • Radar • Test Instrumentation • Communications Key Features • Frequency Range: 1 – 6 GHz • PSAT : 45.4 dBm (PIN = 23 dBm) • PAE: 41% (PIN = 23 dBm) • Power Gain: 22.4 dB (PIN = 23 dBm) • Small Signal Gain: 30.2 dB • Bias: VD = 24 V, IDQ = 2044 mA

文件：660.98 Kbytes 页数：25 Pages

QORVO

威讯联合

1.0 - 6.0 GHz 35 Watt GaN Power Amplifier

Qorvo's QPM0106 is a packaged, high power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process. The QPM0106 operates from 1.0  - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power with 22.4 dB of large signal gain and 41 % power–added efficiency.The QPM0106 is packag • Frequency Range: 1 - 6 GHz\n• PSAT : 45.4 dBm (PIN = 23 dBm)\n• PAE: 41% (PIN = 23 dBm)\n• Power Gain: 22.4 dB (PIN = 23 dBm)\n• Small Signal Gain: 30.2 dB\n• Bias: VD = 24 V, IDQ = 2044 mA\n• Package Dimensions: 15.24 x 15.24 x 3.51 mm;

Qorvo

威讯联合

1.0 – 6.0 GHz 35 W GaN Power Amplifier

Applications • Electronic Warfare • Radar • Test Instrumentation • Communications Key Features • Frequency Range: 1 – 6 GHz • PSAT : 45.4 dBm (PIN = 23 dBm) • PAE: 41% (PIN = 23 dBm) • Power Gain: 22.4 dB (PIN = 23 dBm) • Small Signal Gain: 30.2 dB • Bias: VD = 24 V, IDQ = 2044 mA

文件：660.98 Kbytes 页数：25 Pages

QORVO

威讯联合

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

文件：27.58 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：476.38 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：46.74 Kbytes 页数：4 Pages

SUTEX