N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

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N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

文件：66.57 Kbytes 页数：2 Pages

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N-Channel Enhancement-Mode Vertical DMOS FET

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MOSFET, N-Channel Enhancement-Mode, 60V, 3.0 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold - 2.0V max. \nHigh input impedance \nLow input capacitance - 50pF typical \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

Microchip

微芯科技

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

文件：66.57 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

文件：27.58 Kbytes 页数：4 Pages

SUTEX

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

文件：66.57 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

N-Channel Enhancement-Mode Vertical DMOS FET

文件：640.15 Kbytes 页数：5 Pages

SUTEX