N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

文件：66.57 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

文件：27.58 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件：640.15 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：476.38 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

文件：68.09 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and pos

文件：640.69 Kbytes 页数：5 Pages

SUTEX