100 W, 50 V, 1.2 ??1.4 GHz, GaN on SiC Power Amplifier

文件：2.15054 Mbytes 页数：13 Pages

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1.2 - 1.4 GHz, 100 Watt, 50 Volt GaN on SiC Power Amplifier

The QPA2511 is a 2-stage L-Band internally matched GaN Power Amplifier Module. The QPA2511 operates at pulsed RF CW in frequency range 1.2-1.4 GHz providing typically 50dBm of saturated output power with 29dB of large-signal gain and 60% of power added efficiency.The QPA2511 is matched to 50 Ohm • Operating Frequency Range: 1.2 - 1.4 GHz\n• Saturated Output Power PSAT: 50dBm\n• Power Added Efficiency at PSAT: 60%\n• Large Signal Gain at PSAT: 29 dB\n• Bias: VDS1,2=+50V, IDQ1=10mA, IDQ2=100mA\n• Package Type: SMD\n• Package Dimensions: 25.0 x 12.5 x 3.488 mm;

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100 W, 50 V, 1.2 ??1.4 GHz, GaN on SiC Power Amplifier

文件：2.15054 Mbytes 页数：13 Pages

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2.0 – 11.0 GHz 30W GaN SP3T Switch

Key Features • SP3T • Frequency Range: 2.0 – 11.0 GHz • Input Power for Wideband Receive: 10 W • Input Power for S and X Bands Transmit: 30 W • Insertion Loss: 1.5 dB Typical • Isolation: 20 dB Typical • Switching Speed:

文件：1.36121 Mbytes 页数：25 Pages

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2.0 – 11.0 GHz 30W GaN SP3T Switch

Key Features • SP3T • Frequency Range: 2.0 – 11.0 GHz • Input Power for Wideband Receive: 10 W • Input Power for S and X Bands Transmit: 30 W • Insertion Loss: 1.5 dB Typical • Isolation: 20 dB Typical • Switching Speed:

文件：1.36121 Mbytes 页数：25 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：105.98 Kbytes 页数：7 Pages

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