2.0 – 11.0 GHz 30W GaN SP3T Switch

Key Features • SP3T • Frequency Range: 2.0 – 11.0 GHz • Input Power for Wideband Receive: 10 W • Input Power for S and X Bands Transmit: 30 W • Insertion Loss: 1.5 dB Typical • Isolation: 20 dB Typical • Switching Speed:

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QORVO

威讯联合

Silicon N Channel MOS FET High Speed Power Switching

文件：105.98 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：91.27 Kbytes 页数：7 Pages

RENESAS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 65A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 34mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电