QPC2511

2.0 – 11.0 GHz 30W GaN SP3T Switch

KeyFeatures •SP3T •FrequencyRange:2.0–11.0GHz •InputPowerforWidebandReceive:10W •InputPowerforSandXBandsTransmit:30W •InsertionLoss:1.5dBTypical •Isolation:20dBTypical •SwitchingSpeed:

QPC2511EVB03

2.0 – 11.0 GHz 30W GaN SP3T Switch

KeyFeatures •SP3T •FrequencyRange:2.0–11.0GHz •InputPowerforWidebandReceive:10W •InputPowerforSandXBandsTransmit:30W •InsertionLoss:1.5dBTypical •Isolation:20dBTypical •SwitchingSpeed:

QPC2511SR

2.0 – 11.0 GHz 30W GaN SP3T Switch

KeyFeatures •SP3T •FrequencyRange:2.0–11.0GHz •InputPowerforWidebandReceive:10W •InputPowerforSandXBandsTransmit:30W •InsertionLoss:1.5dBTypical •Isolation:20dBTypical •SwitchingSpeed:

QPC2511TR7

2.0 – 11.0 GHz 30W GaN SP3T Switch

KeyFeatures •SP3T •FrequencyRange:2.0–11.0GHz •InputPowerforWidebandReceive:10W •InputPowerforSandXBandsTransmit:30W •InsertionLoss:1.5dBTypical •Isolation:20dBTypical •SwitchingSpeed:

RJK2511DPK

SiliconNChannelMOSFETHighSpeedPowerSwitching

RJK2511DPK

SiliconNChannelMOSFETHighSpeedPowerSwitching

RN2511

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit, InterfaceCircuitandDriverCircuit •IncludingtwodevicesinSMV(superminitypewith5leads) •Withbuilt-inbiasresistors. •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocessandminiaturize equipment. •Variousresistance

RSZ-2511

1WattSMDMiniatureIsolatedSingleOutput

RSZ-2511HP

1WattSMDMiniatureIsolatedSingleOutput

RTQ2511-QA

14V,2AIQ,200mALDORegulator

GeneralDescription TheRTQ2511isalow-dropout(LDO)voltageregulator withenablefunctionofferingbenefitsofupto14Vinput voltage,low-dropout,low-poweroperation,and miniaturizedpackaging. Thefeaturesoflowquiescentcurrentaslowas2μAand zerodisablecurrentisidealfor