HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • High Current: 2.0 Amp • The SOT–223 package can

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安森美半导体

NPN Silicon Planar Epitaxial Transistor

SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensure

文件：107.86 Kbytes 页数：4 Pages

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安森美半导体

HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • High Current: 2.0 Amp • The SOT–223 package can

文件：101.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN Silicon Planar Epitaxial Transistor

SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensure

文件：136.46 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN Silicon Planar Epitaxial Transistor

SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensure

文件：107.86 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN Silicon Planar Epitaxial Transistor

文件：64.78 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN Silicon Planar Epitaxial Transistor

文件：64.78 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Bipolar Transistor

The UTC PZT751 is designed for power amplifier, regulator,and switching circuits where speed is important. Collector-Emitter voltage: VCEO=-80V Collector Dissipation: PD(MAX)=1.2W Low collector-Emitter saturation voltage Complementary of PNP PZT751;

UTC

友顺

NPN 双极晶体管

This NPN Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: 2.0 Amp\n• The SOT-223 package can be soldered using wave or reflow.\n• SOT-223 package ensures level mounting, resulting in improved thermalconduction, and allows visual inspection of soldered joints. The formedleads absorb thermal stress during soldering, eliminating the possibilit;

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安森美半导体

三极管

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安森美半导体