PXAE263708NB-V1-R2分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PXAE263708NB-V1-R2属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的PXAE263708NB-V1-R2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The PXAE263708NB is a 400-watt (P3dB) LDMOS FET intended for use

in multi-standard cellular power amplifier applications in the 2620 to

2690 MHz frequency band. Features include input and output matching,

high gain and a thermally-enhanced package with earless flange.

Manufactured with Wolfspeed's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

Features

• Broadband internal input and output matching

• Asymmetric Doherty design

- Main: P1dB = 140 W Typ

- Peak: P1dB = 260 W Typ

• Typical pulsed CW performance, 2655 MHz, 28 V,

Doherty configuration, 10 µs, 10 duty cycle, class AB

- Output power at P1dB = 200 W

- Output power at P3dB = 400 W

- Efficiency = 49 (POUT = 57 W avg)

- Gain = 15 dB (POUT = 57 W avg)

• Capable of handling 10:1 VSWR @ 32 V, 100 W (CW)

output power

• Integrated ESD protection

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant