Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

Description The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanc

文件：524.08 Kbytes 页数：9 Pages

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Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz

文件：391.51 Kbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz

文件：524.55 Kbytes 页数：9 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

Description The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanc

文件：524.08 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

Description The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanc

文件：524.08 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 430W, 28V, 2110-2170MHz ·Broadband internal input and output matching\n ·Asymmetrical Doherty design    - Main : P 1dB = 130 W Typ    - Peak : P 1dB = 290 W Typ\n ·Typical Pulsed CW performance, 2140 MHz, 28 V, Doherty configuration    - Output power at P 3dB = 436 W    - Efficiency = 55%    - Gain = 13.5 dB\n ·Capa;

Infineon

英飞凌

High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz

The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design; input and output matching; high gain and thermally-enhanced package with ear ·Broadband internal input and output matching\n·Asymmetrical Doherty design: Main P1dB = 130 W Typ; Peak P1dB = 290 W Typ\n·Typical Pulsed CW performance; 2140 MHz; 28 V; Doherty configuration: Output power at P3dB = 436 W; Efficiency = 55%; Gain = 13.5 dB\n·Capable of handling 10:1 VSWR @28 V; ;

MACOM

Package：H-37275G-6/2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37275G-6

WOLFSPEED

Package：H-37275G-6/2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37275G-6

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