Thermally-Enhanced High Power RF LDMOS FET

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INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

文件：557.7 Kbytes 页数：10 Pages

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科锐

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

文件：1.28242 Mbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

文件：1.28242 Mbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

文件：1.28242 Mbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

文件：1.28242 Mbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

文件：1.28242 Mbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Cellular (2300 MHz to 2700 MHz)

High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz ·Broadband internal matching\n ·Asymmetric design  - Main = 50 W P1dB - Peak = 75 W P1dB - Efficiency = 57%\n ·CW performance in Doherty configuration, 2635 MHz, 28 V - Output power at P1dB = 107 W - Gain = 14.4 dB - Efficiency = 57%\n ·Integrated ESD protection: Human Body Model, Class 1;

Infineon

英飞凌

High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz

Broadband internal matchingAsymmetric design: Main P1dB = 50 W; Peak P1dB = 75 WCW performance in Doherty configuration; 2635 MHz; 28 V; Output power at P1dB = 107 W; Gain = 14.4 dB; Efficiency = 57%Integrated ESD protection: Human Body Model; class 1C (per JESD22-A114)Capable of handling 10:1 V • Broadband internal matching\n• CW performance in Doherty configuration; 2635 MHz; 28 V; Output power at P1dB = 107 W; Gain = 14.4 dB; Efficiency = 57%\n• Capable of handling 10:1 VSWR @28 V; 120 W (CW) output power\n• Pb-free; RoHS-compliant\n;

MACOM