High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz

Broadband internal matchingAsymmetric design: Main P1dB = 50 W; Peak P1dB = 75 WCW performance in Doherty configuration; 2635 MHz; 28 V; Output power at P1dB = 107 W; Gain = 14.4 dB; Efficiency = 57%Integrated ESD protection: Human Body Model; class 1C (per JESD22-A114)Capable of handling 10:1 V • Broadband internal matching\n• CW performance in Doherty configuration; 2635 MHz; 28 V; Output power at P1dB = 107 W; Gain = 14.4 dB; Efficiency = 57%\n• Capable of handling 10:1 VSWR @28 V; 120 W (CW) output power\n• Pb-free; RoHS-compliant\n;

MACOM

Package：H-37248-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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Package：H-37248-4；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37248-4

WOLFSPEED

Package：H-37248-4；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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