Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz

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英飞凌

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 55 W, 28 V, 1805 - 2170 MHz · Broadband internal input and output matching\n ·Asymmetrical Doherty design - Main : P 1dB = 20 W Typ - Peak : P 1dB = 35 W Typ\n ·Typical Pulsed CW performance, 1990 MHz, 28 V, Doherty Configuration - Output power at P 1dB = 40.7 W - Efficiency = 63.7% - Gain = 16.7 dB\n ·Capable of handl;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz

文件：466.37 Kbytes 页数：9 Pages

Infineon

英飞凌