Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz

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Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 55 W, 28 V, 1805 - 2170 MHz  \n ·Broadband internal input and output matching\n ·Asymmetrical Doherty Design - Main: P 1dB = 20 W Typ - Peak: P 1dB = 35 W Typ\n ·Typical Pulsed CW performance, 1880 MHz, 26 V (Doherty Configuration) - Output power at P 1dB = 24.7 W - Efficiency = 55.3% - Gain = 15.05 dB\n ·Capable ;

Infineon

英飞凌

IC AMP RF LDMOS H-37275-4

Wolfspeed(CREE)

Package：PG-HB1SOF-4；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS DUAL PG-HB1SOF-4

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