Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz

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Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz

文件：600.57 Kbytes 页数：10 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 90 W, 28 V, 1805 – 2170 MHz ·Broadband internal input and output matching\n ·Asymmetric Doherty design - Main: P 1dB = 35 W Typ - Peak: P 1dB = 55 W Typ\n ·Typical CW performance, 1920 MHz, 26 V  - Output power at P 1dB = 50 W - Efficiency = 58% - Gain = 16.6 dB\n ·Capable of handling 10:1 VSWR @28 V, 90 W (CW) ;

Infineon

英飞凌