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BSC009N04LSSC

OptiMOSTMPower-MOSFET,40V

Features •Dual-sidecooledpackagewithlowestjunction-topthermalresistance •Optimizedforsychronousrectification •175°Crated •Verylowon-resistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •H

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

GT009N04TL

N-ChannelEnhancementModePowerMOSFET

Description TheGT009N04TLusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GT009N04TLA

N-ChannelEnhancementModePowerMOSFET

Description TheGT009N04TLAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

HGT009N04A

40VN-ChPowerMOSFET

Feature ◇HighSpeedPowerSwitching ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇PowerTools ◇UPS ◇M

HUNTECKHunteck Semiconductor

恒泰柯半导体恒泰柯半导体(上海)有限公司

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