Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz

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INFINEON

英飞凌

Unmatched input and output

Infineon

英飞凌

UHF & L Band (400 MHz to 1400 MHz)

High Power RF LDMOS FET, 25 W, 50 V, 500 – 1400 MHz ·Unmatched input and output\n ·High gain and efficiency\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Excellent ruggedness\n ·Pb-free and RoHS compliant\n ·Capable of withstanding a 10:1 load mismatch all phase angles) at POUT = 25 W, under CW condition\n ·Package: H-36265-2;

Infineon

英飞凌

High Power RF LDMOS FET 25 W; 500 - 1400 MHz

The PTVA12025 LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced surface-mount package or with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent therm ·Unmatched\n·High gain and efficiency\n·Integrated ESD protection\n·Low thermal resistance\n·Excellent ruggedness\n·Pb-free and RoHS-compliant;

MACOM

Package：H-36265-2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS H-36265-2

WOLFSPEED

Package：H-36265-2；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-36265-2

WOLFSPEED

包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED