UHF & L Band (400 MHz to 1400 MHz)

High Power RF LDMOS FET, 25 W, 50 V, 500 – 1400 MHz ·Unmatched input and output\n ·High gain and efficiency\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Excellent ruggedness\n ·Pb-free and RoHS compliant\n ·Capable of withstanding a 10:1 load mismatch all phase angles) at POUT = 25 W, under CW condition\n ·Package: H-36265-2;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz

文件：1.6283 Mbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz

文件：1.6283 Mbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz

文件：1.6283 Mbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz

文件：1.6283 Mbytes 页数：14 Pages

INFINEON

英飞凌

Package：H-36265-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

INFINEON

英飞凌