UHF & L Band (400 MHz to 1400 MHz)

High Power RF LDMOS FET, 1000 W, 50 V, 1030 / 1090 MHz ·Broadband input matching\n ·High gain and efficiency\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Excellent ruggedness\n ·Pb-free and RoHS compliant\n ·Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32μS ON / 18μS OFF) X 8;

Infineon

英飞凌

High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance a ·Broadband input matching\n·High gain and efficiency\n·Integrated ESD protection\n·Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)\n·Low thermal resistance\n·Pb-free and RoHS compliant\n·Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE-S pulse condition; (32;

MACOM

Package：H-36275-4；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-36275-4

WOLFSPEED

Package：H-36275-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

Infineon

英飞凌