Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz

Description The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s adva

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WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz

文件：481.3 Kbytes 页数：10 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz

文件：606.87 Kbytes 页数：10 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz

Description The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s adva

文件：708.76 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz

Infineon

英飞凌

Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET, 275 W, 48 V, 733 - 805 MHz ·Broadband internal input matching\n ·Asymmetrical Doherty design   - Main : P 1dB = 165 W Typ   - Peak : P 1dB = 250 W Typ\n ·Typical Pulsed CW performance, 805 MHz, 48 V, combined outputs   - Output power at P 1dB = 275 W   - Efficiency = 59.6%   - Gain = 18.6 dB\n ·Capable of handling 10:1;

Infineon

英飞凌

High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz

The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this de ·Broadband internal input matching\n·Asymmetrical Doherty design: Main P1dB = 165 W Typ; Peak P1dB = 250 W Typ\n·Typical Pulsed CW performance; 805 MHz; 48 V; combined outputs: Output power at P1dB = 275 W; Efficiency = 59.6%; Gain = 18.6 dB\n·Capable of handling 10:1 VSWR @ 48 V; 81.3 W CW outp;

MACOM

Package：HBSOF-6-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC RF LDMOS FET 6HBSOF

WOLFSPEED