High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

文件：674.06 Kbytes 页数：16 Pages

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High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

文件：528.45 Kbytes 页数：16 Pages

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High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes 页数：16 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes 页数：16 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes 页数：16 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes 页数：16 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes 页数：16 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes 页数：16 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 300 W, 30 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Enhanced for use in DPD error correction systems\n ·Wide video bandwidth\n ·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, - POUT = 49.5 dBm Avg - Gain = 17.5 dB - Efficiency = 30%\n ·Increased negative gate-source voltage range for improved perfo;

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