Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

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INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz

文件：553.31 Kbytes 页数：13 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

INFINEON

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 240 W, 2110 – 2170 MHz ·Broadband internal input and output matching\n ·Enhanced for use in DPD error correction systems\n ·Wide video bandwidth\n ·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = ;

Infineon

英飞凌

High Power RF LDMOS FET240 W, 2110 – 2170 MHz

The PTFB212503FL is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manuf • Broadband internal input and output matching\n• Enhanced for use in DPD error correction systems\n• Wide video bandwidth\n• Typical CW performance, 2170 MHz, 30 V\n• Output power at P1dB = 240 W\n• Efficiency = 54%\n• Increased negative gate-source voltage range for improved performance in Doh;

MACOM

Package：2-扁平封装，叶片引线，带法兰；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-34288-4

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