PTFB211503FLV2数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz

特性 Features

·Broadband internal matching
·Enhanced for use in DPD error correction systems
·Typical two-carrier WCDMA performance at 2170 MHz, 30 V, - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc
·Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%
·Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
·Integrated ESD protection
·Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power
·Pb-Free and RoHS compliant
·Package: H-34288-4/2, earless