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PTFB201402FC

High Power RF LDMOS Field Effect Transistor

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal

文件:841.14 Kbytes 页数:14 Pages

INFINEON

英飞凌

PTFB201402FC

High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process, this device offers excellent thermal

文件:595.53 Kbytes 页数:14 Pages

CREE

科锐

PTFB201402FCV1R0

High Power RF LDMOS Field Effect Transistor

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal

文件:841.14 Kbytes 页数:14 Pages

INFINEON

英飞凌

PTFB201402FCV1R0XTMA1

High Power RF LDMOS Field Effect Transistor

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal

文件:841.14 Kbytes 页数:14 Pages

INFINEON

英飞凌

PTFB201402FCV1R250

High Power RF LDMOS Field Effect Transistor

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal

文件:841.14 Kbytes 页数:14 Pages

INFINEON

英飞凌

PTFB201402FCV1R250XTMA1

High Power RF LDMOS Field Effect Transistor

Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal

文件:841.14 Kbytes 页数:14 Pages

INFINEON

英飞凌

PTFB201402FCV1R0

High Power RF LDMOS Field Effect Transistor

Infineon

英飞凌

PTFB201402FC-V1-R0

Package:H-37248-4;包装:卷带(TR) 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:140W, SI LDMOS, 28V, 2010-2025MH

WOLFSPEED

PTFB201402FC-V1-R250

Package:H-37248-4;包装:卷带(TR) 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:IC AMP RF LDMOS

WOLFSPEED

详细参数

  • 型号:

    PTFB201402FC

  • 功能描述:

    射频MOSFET电源晶体管 RFP-LDMOS 9

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
INFINEON
23+
NA
8000
只做原装现货
询价
INFINEON
23+
NA
7000
询价
INFINEON
2406+
NA
3886
优势代理渠道,原装现货,可全系列订货
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON
25+
H-37248-4
26
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
493
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
22+
H372484
9000
原厂渠道,现货配单
询价
INFINEON/英飞凌
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Cree/Wolfspeed
2022+
H-37248-4
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
更多PTFB201402FC供应商 更新时间2026-4-17 11:03:00