High Power RF LDMOS FET80 W, 28 V, 2110 – 2170 MHz

The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Wolfspeed's advanced LDMOS proc • Broadband internal matching\n• Typical single-carrier WCDMA performance at 2170 MHz, 28 V\n• Average output power = 25 W\n• Linear Gain = 18.5 dB\n• Efficiency = 32.5%\n• Adjacent channel power = –37 dBc\n• Typical CW performance, 2170 MHz, 28 V\n• Output power at P1dB = 80 W\n• Efficiency = 5;

MACOM

Package：H-37265-2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37265-2

WOLFSPEED

Package：H-37265-2；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF LDMOS 80W H37265-2

WOLFSPEED

TI
模块

TI

德州仪器

上传：深圳市物联易科技有限公司

TI/德州仪器
EUT-6

TI/德州仪器

上传：深圳市坤融电子科技有限公司