Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

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Thermally-Enhanced High Power RF LDMOS FETs

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Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 ??1880 MHz

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CREE

科锐

Thermally-Enhanced High Power RF LDMOS FETs

文件：694.87 Kbytes 页数：12 Pages

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Thermally-Enhanced High Power RF LDMOS FETs

文件：694.87 Kbytes 页数：12 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：694.87 Kbytes 页数：12 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：694.87 Kbytes 页数：12 Pages

INFINEON

英飞凌

Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 240 W, 1805 – 1880 MHz ·Broadband internal input and output matching\n ·Enhanced for use in DPD error correction systems\n ·Typical two-carrier WCDMA performance, 1880 MHz, 30 V - Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = –35 dBc\n ·Typical CW perf;

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High Power RF LDMOS FET 240 W, 1805 – 1880 MHz

The PPTFB182503FL is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufact • Broadband internal input and output matching\n• Enhanced for use in DPD error correction systems\n• Typical two-carrier WCDMA performance, 1880 MHz, 30 V\n• Average output power = 50 W\n• Linear gain = 19 dB\n• Drain efficiency = 28 %\n• Intermodulation distortion = –35 dBc\n• Typical CW perfo;

MACOM

Package：H-33288-6；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-34288-4

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