首页 >PT6003ETSP-AA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNDarlingtonTransistors NPNDarlingtonTransistorsTO-204MA(TO-3) | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
Fits7/8(22mm)diameterholes | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PlasticpackagehasUnderwritersLaboratory | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
600V-20A-IGBTandDiodeHighSpeedPowerSwitching Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
600V-20A-IGBTandDiodeHighSpeedPowerSwitching Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
60WTripleOutputMedicalType | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬（广州）电子有限公司 | MEANWELL | ||
60WTripleOutputMedicalType | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬（广州）电子有限公司 | MEANWELL | ||
SCRs1-70AMPSNON-SENSITIVEGATE Features ●ElectricallyIsolatedPackages ●HighVoltageCapability-30-600Volts ●HighSurgeCapability-upto950Amps ●GlassPassivatedChip | Teccor Teccor Electronics | Teccor |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
