丝印：PSMNR90-30BL；Package：SOT404；N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK

1. General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses

文件：743.95 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：H90L40J；Package：SOT1023；N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 300

文件：293.56 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 300

文件：293.56 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel 40 V, 1 mOhm, standard level MOSFET in LFPAK56

1. General description 220 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 2

文件：231.59 Kbytes 页数：10 Pages

NEXPERIA

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丝印：XH90L50S；Package：SOT1235；N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88

1. General description 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spik

文件：318.98 Kbytes 页数：12 Pages

NEXPERIA

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N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

General description N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliability co

文件：278.43 Kbytes 页数：8 Pages

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丝印：XPF90S80A；Package：CCPAK1212；NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 505 Amps ID(max) continuous current rating • Low QG

文件：396.47 Kbytes 页数：13 Pages

NEXPERIA

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丝印：XPF90S80C；Package：CCPAK1212i；NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 505 Amps ID(max) continuous current rating • Low QG

文件：373.43 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 30 V 1.0 m廓 logic level MOSFET in D2PAK

文件：237.7 Kbytes 页数：14 Pages

恩XP

N-channel 30 V 1.0 m廓 logic level MOSFET in D2PAK

文件：282.9 Kbytes 页数：13 Pages

PHI

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