PSMNR90-40YSN中文资料安世数据手册PDF规格书

1. General description

220 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

• 220 A continuous ID(max)

• Avalanche rated, 100 tested

• Low-spiking, allowing for high system efficiency and low EMI designs

• Optimised body-diode, gives low VSD and soft switching without the associated high IDSS

leakage

• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to

175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints for ultimate reliability

• Low parasitic inductance and resistance

3. Applications

• High-performance synchronous rectification

• DC-to-DC converters

• High performance and high efficiency server power supply

• Brushless DC motor control

• Battery protection

• Load-switch

• eFuse