PSMNR82-30YLE中文资料安世数据手册PDF规格书

厂商型号	PSMNR82-30YLE
功能描述	N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
丝印标识	E82L30Y
封装外壳	SOT669
文件大小	315.31 Kbytes
页面数量	13 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-21 14:41:00
人工找货	PSMNR82-30YLE价格和库存，欢迎联系客服免费人工找货

1. General description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package

optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode

applications.

2. Features and benefits

• Fully optimized Safe Operating Area (SOA) for superior linear mode operation

• Optimized for low RDSon / low I2R conduction losses

• LFPAK56E package for applications that demand the highest performance and reliability in a

30 mm2 footprint

• Low leakage < 1 μA at 25 °C

• Copper-clip for low parasitic inductance and resistance

• High reliability LFPAK package, qualified to 175 °C

3. Applications

• Hot swap in 12 V-20 V applications

• e-Fuse

• DC switch

• Load switch

• Battery protection