丝印：E82L30Y；Package：SOT669；N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

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N-channel 30 V, 0.82 mOhm, ASFET with enhanced SOA in LFPAK56

N-channel enhancement mode ASFET with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area optimized for hot-swap, inrush and linear-mode applications. • Fully optimized Safe Operating Area (SOA) for superior linear mode operation\n• Optimized for low RDSon / low I2R conduction losses\n• LFPAK56E package for applications that demand the highest performance and reliability in a 30 mm2 footprint\n• Low leakage < 1 µA at 25 °C\n• Copper-clip for low p;

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High Voltage Resistors

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RI82 Thick Film High Voltage Resistors

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