N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 300

文件：293.56 Kbytes 页数：12 Pages

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N-channel 40 V, 1 mOhm, standard level MOSFET in LFPAK56

1. General description 220 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 2

文件：231.59 Kbytes 页数：10 Pages

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Axial Lead Chokes

文件：111.77 Kbytes 页数：2 Pages

COILCRAFT

Schottky barrier rectifier diodes

DESCRIPTION The BYG 90-40 series consists of Schottky barrier rectifier diodes, fabricated in planar technology, and encapsulated in rectangular SOD106A plastic SMD packages. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time

文件：36.39 Kbytes 页数：7 Pages

PHI

飞利浦

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

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