Schottky barrier rectifier diodes

DESCRIPTION The BYG 90-40 series consists of Schottky barrier rectifier diodes, fabricated in planar technology, and encapsulated in rectangular SOD106A plastic SMD packages. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time

文件：36.39 Kbytes 页数：7 Pages

PHI

PHI

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

安世

N-channel 40 V, 0.9 mΩ, 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology

1. General description 375 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an

文件：324.59 Kbytes 页数：13 Pages

NEXPERIA

安世

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes 页数：234 Pages

NEXPERIA

安世