丝印：PSMN2R8-40BS；Package：SOT404；N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

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丝印：PSMN2R8-40PS；Package：TO-220AB；N-channel TO220 40 V 2.8 m廓 standard level MOSFET

文件：751.95 Kbytes 页数：13 Pages

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丝印：2D8S40Y；Package：SOT669；N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 160

文件：306.62 Kbytes 页数：13 Pages

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N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 160

文件：306.62 Kbytes 页数：13 Pages

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N-channel 80 V, 3 mΩ standard level FET in D2PAK

1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction los

文件：979.37 Kbytes 页数：14 Pages

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丝印：X2F8S80S；Package：SOT1235；NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in LFPAK88 package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low QRR for higher efficiency and lower spiking • 190 Amp ID(max) continuous current rating • Low QG × RDSon FOM f

文件：251.16 Kbytes 页数：9 Pages

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N-channel 25 V 2.8 m廓 logic level MOSFET in LFPAK33 using NextPower Technology

文件：1.12322 Mbytes 页数：14 Pages

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N-channel 25 V 2.8 m廓 logic level MOSFET in LFPAK33 using

文件：371.39 Kbytes 页数：14 Pages

PHI

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N-channel 40 V 2.9 m standard level MOSFET in D2PAK

文件：222.14 Kbytes 页数：15 Pages

恩XP

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：298.78 Kbytes 页数：2 Pages

ISC

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