丝印：X2F8S80S；Package：SOT1235；NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in LFPAK88 package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low QRR for higher efficiency and lower spiking • 190 Amp ID(max) continuous current rating • Low QG × RDSon FOM f

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NEXPERIA

安世

NextPower 80 V, 2.8 mOhm, 190 Amp, N-channel MOSFET in LFPAK88 package

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. • Low QRR for higher efficiency and lower spiking\n• Low QG × RDSon FOM for high efficiency switching applications\n• Avalanche rated and 100% tested\n• Ha-free and RoHS compliant LFPAK88 package;

Nexperia

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N-channel 80 V, 3 mΩ standard level FET in D2PAK

1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction los

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NEXPERIA

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-channel 80 V, 3 m standard level FET in D2PAK

文件：232.52 Kbytes 页数：14 Pages

PHI

PHI