丝印：2D8S40Y；Package：SOT669；N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 160

文件：306.62 Kbytes 页数：13 Pages

NEXPERIA

安世

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

安世

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes 页数：234 Pages

NEXPERIA

安世

N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 160

文件：306.62 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. • 160 A continuous ID(max) rating\n• Strong SOA (linear-mode) rating\n• Low QRR, QG and QGD for high system efficiency and low EMI designs\n• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C\n• Low parasitic inductance and resistance;

Nexperia

安世