丝印：PSMN2R0-30BL；Package：D2PAK；N-channel 30 V 2.1 m廓 logic level MOSFET in D2PAK

文件：812.92 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：PSMN2R0-60PS；Package：TO-220AB；N-channel 60 V 2.2 m廓 standard level MOSFET in TO-220

文件：749.02 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：X2F0S10S；Package：SOT1235；NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 267 Amps ID(max) continuous current rating • Low QG × RDSon FOM

文件：335.54 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 30 V 2.1 mΩ logic level MOSFET

1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losse

文件：718.65 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 30 V 2 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

文件：828.81 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：2D0L40Y；Package：SOT669；N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180 A

文件：307.38 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180 A

文件：307.38 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：2H055L；Package：SOT1023；N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking

文件：300.41 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：2D025L；Package：LFPAK33；N-channel 25 V, 2.1 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

文件：734.73 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：2D025L；Package：LFPAK56；N-channel 25 V, 2.09 m廓, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：730.5 Kbytes 页数：14 Pages

NEXPERIA

安世