PSMN2R0-55YLH丝印代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
PSMN2R0-55YLH	文件：300.41 Kbytes Page：13 Pages	丝印：2H055L；Package：SOT1023；N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E 1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking 文件：300.41 Kbytes 页数：13 Pages	NEXPERIA 安世	NEXPERIA
PSMN2R0-55YLH	文件：300.15 Kbytes Page：12 Pages	丝印：2H055L；Package：SOT1023；N-channel 55 V, 2.2 mOhm, 200 A continuous, logic level MOSFET in LFPAK56E using NextPower-S3 technology 1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking 文件：300.15 Kbytes 页数：12 Pages	NEXPERIA 安世	NEXPERIA

更多2H055L供应商更新时间2026-10-31 8:01:00