PSMN1R1-30YLE中文资料安世数据手册PDF规格书

1. General description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package

optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode

applications.

2. Features and benefits

• Fully optimized Safe Operating Area (SOA) for superior linear mode operation

• Optimized for low RDSon / low I2R conduction losses

• LFPAK56 package for applications that demand the highest performance and reliability in a

30 mm2 footprint

• Low leakage <1 μA at 25 °C

• Copper-clip for low parasitic inductance and resistance

• High reliability LFPAK package, qualified to 175 °C

3. Applications

• Hot swap in 12 V - 20 V applications

• e-Fuse

• DC switch

• Load switch

• Battery protection