PSMN1R0-40YSH中文资料安世数据手册PDF规格书

1. General description

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

• 290 A continuous ID(max)

• Avalanche rated, 100 tested

• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

• Low QRR, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage

• Strong linear-mode / SOA rating

• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to

175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints for ultimate reliability

• Low parasitic inductance and resistance

3. Applications

• High-performance synchronous rectification

• DC-to-DC converters

• High performance and high efficiency server power supply

• Brushless DC motor control

• Battery protection

• Load-switch and eFuse