丝印：1E1L30Y；Package：SOT669；N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

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安世安世半导体(中国)有限公司

N-channel 30 V 1.3 m廓 logic level MOSFET in I2PAK

文件：745.1 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel 30 V 1.3 m廓 logic level MOSFET in TO-220

文件：750.28 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Nexperia(安世)
SOT669

Nexperia(安世)

上传：深圳市金芯世纪电子有限公司

NEXPERIA/安世
SOT-669

NEXPERIA/安世

上传：美源芯科（深圳）电子科技有限公司