PSMN1R0-40YSH中文资料N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology数据手册Nexperia规格书

描述 Description

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

特性 Features

• 290 A continuous ID(max)
• Avalanche rated, 100% tested
• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
• Low QRR, QG and QGD for high system efficiency and low EMI designs
• Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
• Strong linear-mode / SOA rating
• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints for ultimate reliability
• Low parasitic inductance and resistance

应用 Application

• High-performance synchronous rectification
• DC-to-DC converters
• High performance and high efficiency server power supply
• Brushless DC motor control
• Battery protection
• Load-switch and eFuse