PSMN1R0-40ULD中文资料N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology数据手册Nexperia规格书

描述 Description

SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

特性 Features

• Improved creepage and clearance – meets the requirements of UL2595
• 280 A capability
• Avalanche rated, 100% tested at IAS = 190 A
• NextPower-S3 technology delivers 'superfast switching with soft recovery'
• Low QRR, QG and QGD for high system efficiency and low EMI designs
• Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
• Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
• High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150°C
• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
• Low parasitic inductance and resistance

应用 Application

• Brushed and brushless motor control
• Battery powered appliances where enhanced creepage and clearance is required to meet UL2595
• For non-UL2595 applications please use PSMN1R0-40YLD