PSMN0R9-30ULD数据手册Nexperia中文资料规格书

描述 Description

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

特性 Features

• Improved creepage and clearance – meets the requirements of UL2595
• 300 A capability
• Avalanche rated, 100% tested at IAS = 190 A
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25°C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150°C
• Wave solderable; exposed leads for optimal visual solder inspection

应用 Application

• Brushed and brushless motor control
• Battery powered appliances where enhanced creepage and clearance is required to meet UL2595
• For non-UL2595 applications please use PSMN0R9-30YLD