N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • Advanced TrenchMOS provides low RDSon and low gate charge\n• High efficiency gains in switching power converters\n• Improved mechanical and thermal characteristics\n• LFPAK provides maximum power density in a Power SO8 package;

Nexperia

安世

N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • Low parasitic inductance and resistance\n• Optimised for 4.5V Gate drive utilising Superjunction technology\n• Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads;

Nexperia

安世

TrenchMOS transistor

恩XP

恩智浦