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PMX100UN

20 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm • Trench MOSFET technology • Low profile (0.25 mm

文件:277.8 Kbytes 页数:14 Pages

NEXPERIA

安世

PMX100UN

20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm •

文件:276.33 Kbytes 页数:14 Pages

NEXPERIA

安世

PMX100UN_V01

20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm •

文件:276.33 Kbytes 页数:14 Pages

NEXPERIA

安世

PMX100UNE

丝印:N;Package:DFN0603-3;20 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits • Low threshold voltage • Trench MOSFET technology • Low profile (0.25 mm) • Electr

文件:274.23 Kbytes 页数:14 Pages

NEXPERIA

安世

PMX100UNZ

20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm •

文件:276.33 Kbytes 页数:14 Pages

NEXPERIA

安世

PMX100UN

20 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. • Low threshold voltage\n• Leadless ultra small package; 0.63 x 0.33 x 0.25 mm\n• Trench MOSFET technology\n• Low profile (0.25 mm);

Nexperia

安世

PMX100UNE

20 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. • Low threshold voltage\n• Trench MOSFET technology\n• Low profile (0.25 mm)\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM;

Nexperia

安世

技术参数

  • Package name:

    DFN0603-3

  • Product status:

    Production

  • Channel type:

    N

  • Nr of transistors:

    1

  • VDS [max] (V):

    20

  • VGS [max] (V):

    12

  • RDSon [max] @ VGS = 4.5 V (mΩ):

    210

  • RDSon [max] @ VGS = 2.5 V (mΩ):

    230

  • integrated gate-source ESD protection diodes:

    N

  • Tj [max] (°C):

    150

  • ID [max] (A):

    1.3

  • QGD [typ] (nC):

    0.4

  • QG(tot) [typ] @ VGS = 4.5 V (nC):

    1.5

  • Ptot [max] (W):

    0.3

  • VGSth [typ] (V):

    0.7

  • Automotive qualified:

    N

  • Ciss [typ] (pF):

    144

  • Coss [typ] (pF):

    14

  • Release date:

    2021-04-06

供应商型号品牌批号封装库存备注价格
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
询价
NEXPERIA
24+
con
335
现货常备产品原装可到京北通宇商城查价格
询价
Nexperia
2024
8787
全新、原装
询价
Nexperia
25+
DFN0603-3(SOT8013)
18746
样件支持,可原厂排单订货!
询价
Nexperia
25+
DFN0603-3(SOT8013)
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
Nexperia(安世)
25+
DFN0603-3
17000
原装品质,专业护航,省心采购
询价
GOODWAY
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
PHL
25+
BGA
2317
品牌专业分销商,可以零售
询价
PHL
24+
BGA
6868
原装现货,可开13%税票
询价
PHL
2023+环保现货
BGA
4
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
更多PMX100UN供应商 更新时间2026-4-17 11:08:00